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| 2SK1579 Silicon N-Channel MOS FET Application High speed power switching Features * Low on-resistance * High speed switching * Suitable for low voltage operation Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SK1579 Absolute Maximum Ratings (Ta = 25C unless otherwise specified.) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 12 7 2 4 2 1 150 -55 to +150 Unit V V A A A W C C Notes 1. PW 100 s, duty cycle 10% 2. Value on the almina ceramic board (12.5 x 20 x 0.7 mm) 2 2SK1579 Electrical Characteristics (Ta = 25C unless otherwise specified.) Item Drain to source cutoff current Gate to source cutoff current Gate to source cutoff voltage Drain to source on resistance (1) Drain to source on resistance (2) Symbol Min I DSS I GSS VGS(off) RDS(on)1 RDS(on)2 -- -- 0.4 -- -- 1 -- -- -- -- -- Typ -- -- -- 0.36 0.25 2.5 110 30 150 500 1500 Max 1 5 1.4 0.7 0.35 -- -- -- -- -- -- Unit A A V S pF pF pF ns ns I D = 0.2 A, VGS = 0, Vin = 4 V, RL = 51 Test conditions VDS = 8 V, VGS = 0 VGS = 6.5 V, VDS = 0 VDS = 5 V, ID = 100 A VGS = 2.2 V, ID = 0.5 A VGS = 4 V, ID = 1 A VDS = 5 V, ID = 1 A, VGS = 0.1 V VDS = 5 V, VGS = 0, f = 1 MHz DC forward transfer admittance |yfs| Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Turn-off time Note 1. Marking is "DY". Ciss Crss Coss t (on) t (off) 3 2SK1579 Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) Maximum Safe Operation Area 2 1 0.5 0.2 O is per lim ati ite on d b in y R this DS DC (o n) 1.0 5 ar ea Op 10 era PW = 10 ms 1 Shot 0.5 tio n( T C =2 5 C) 0 50 100 Ambient Temperature Ta (C) 150 0.1 Ta = 25C 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 4V 3.5 V 3V 2.5 V 3 5 Ta = 25C Pulse Test Drain Current ID (A) 4 3 2 1 VGS = 1.5 V 0 2 6 8 4 10 Drain to Source Voltage VDS (V) 0 Typical Transfer Characteristics Ta = -25C 25C 75C 4 Drain Current ID (A) 2 2V 1 VDS = 5 V Pulse Test 1 3 4 2 Gate to Source Voltage VGS (V) 5 4 2SK1579 Drain to Source on State Resistance RDS (on) () Drain to Source on State Resistance vs. Gate to Source Voltage 0.5 Static Drain to Source on State Resistance RDS (on) () 5 2 1 0.5 0.2 0.1 0.05 0.2 4V Ta = 25C Pulse Test 2V VGS = 3 V Static Drain to Source on State Resistance vs. Drain Current 0.4 ID = 0.1 A 0.2 A 0.3 0.5 A 1 A Ta = 25C Pulse Test 0.2 0.1 0 2 1 3 4 Gate to Source Voltage VGS (V) 5 0.5 5 2 10 1 Drain Current ID (A) 20 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 1.0 Pulse Test 50 Forward Transfer Admittance vs. Drain Current VDS = 5 V Pulse Test 20 10 5 Ta = -25C 25C 75C 0.8 0.6 ID = 1 A 0.5 A ID = 0.5 A VGS = 2 V 0.4 VGS = 4 V 2 1 0.05 0.2 0.2 1A 0 -25 2A 25 0 50 75 Case Temperature TC (C) 100 0.5 2 10 1 5 Drain Current ID (A) 20 5 2SK1579 Reverse Drain Current vs. Sourse to Drain Voltage 5 Reverse Dratin Current IDR (A) Pulse Test Capacitance C (pF) 200 Ciss 100 50 Crss 500 Coss Typical Capacitance vs. Drain to Source Voltage 4 3 2 VGS = 2 V VGS = 0 20 10 5 0.1 VGS = 0 f = 1 MHz 0.2 1 5 0.5 2 Drain to Source Voltage VDS (V) 10 1 0 0 1.0 2.0 Source to Drain Voltage VSD (V) Switching Characteristics 5,000 VGS = 4 V, VDD = 10 V PW = 2 s, Duty cycle = 1% Switching Time t (ns) 2,000 1,000 500 tf tr td (on) 0.5 1 2 0.2 Drain Current ID (A) 5 td (off) 200 100 50 0.05 0.1 6 Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 0.1 4.25 Max UPAK -- Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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